PART |
Description |
Maker |
TC58NVG2D4BFT00 |
4 GBIT (512M X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TC58NS100DC |
1 GBit CMOS NAND EPROM
|
Toshiba
|
NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
NAND08GW4B2CN6E NAND08G-BXC NAND08GR3B2C NAND08GR3 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V http://
|
TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba. Toshiba Semiconductor
|
H27U4G6F2D H27U4G8F2D H27U4G8F2DKA-BM H27U4G8F2DTR |
4 Gbit (512M x 8 bit) NAND Flash
|
Hynix Semiconductor
|
H27UAG8T2A |
16 Gbit (2048 M x 8 bit) NAND Flash
|
Hynix
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
AM27X128 AM27X128-120JC AM27X128-120JI AM27X128-12 |
CMOS Quad 2-Input NAND Schmitt Triggers 14-CDIP -55 to 125 16K X 8 OTPROM, 90 ns, PDIP28 CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 128千比特(16亩8位)的CMOS ExpressROM装置 CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 16K X 8 OTPROM, 150 ns, PDIP28 CAPACITOR .0033UF UV BOX TYPE 16K X 8 OTPROM, 150 ns, PQCC32 CMOS Quad 2-Input NAND Schmitt Triggers 14-TSSOP -55 to 125 128 Kilobit (16 K x 8-Bit) CMOS ExpressROM Device
|
SPANSION LLC PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72 1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4,银
|
http:// Maxwell Technologies, Inc
|
NAND16GW3C4A NAND08GW3C4AN1E NAND16GW3C4AN1E NAND0 |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
NAND16GW3C4B NAND08GW3C4BN1E NAND16GW3C4BN1E NAND0 |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|